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name link intern personenkennziffer 0 Conrad Wolf https://www.hs-coburg.de/personen/prof-dr-conrad-wolf/ true 1 Andreas Ladenburger false 2 Rainer Enchelmaier false 3 Klaus Thonke false 4 Rolf Sauer false - 0 => array (4)$post['autoren'][0]
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<p>We present a technique to contact individual silicon quantum dots (QDs) by nano-electrodes making use of a self-alignment effect. Starting from an ultra thin silicon on insulator (SOI) substrate we employ self-assembled gold colloidal particles as an etch mask. These particles are deposited onto the substrate using aminosilane [3-(2-aminoethylamino)propyltrimethoxysilane] as an adhesion agent yielding a sub-monolayer sample coverage. The QDs are then fabricated by applying a CF<sub>4</sub> reactive ion etch (RIE) process to remove the silicon layer everywhere except below the gold colloids. Subsequently, the colloidal mask is removed by a wet chemical etch and 100-200 nm wide metal wires are patterned by electron beam lithography (EBL) onto the QD-covered samples. A nanometer-sized gap is created in these wires by a controlled electromigration process. The metal wires will preferentially break at the positions of the QDs, because the metal layer is dilated there resulting in a locally higher current density. This leads to a self-alignment effect of the evolving nano-electrodes with respect to the QDs. The native oxide of the silicon QDs is used as a tunneling barrier leading to a single-electron device. The oxide thickness can be increased in a controlled manner by self-limiting thermal oxidation to adjust the tunneling resistance. Finally, I(V)-traces of these devices are collected at liquid helium temperature. They show clear Coulomb blockade behavior as well as Coulomb staircase features.<br></p>
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Wolf, Conrad R.; Ladenburger, Andreas; Enchelmaier, Rainer; Thonke, Klaus; Sauer, Rolf (2006): SOI-based silicon quantum dots contacted by self-aligned nano-electrodes. MRS Fall Meeting 2006 (Boston, USA).
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https://www.hs-coburg.de/publikation/3612-soi-based-silicon-quantum-dots-contacted-by-self-aligned-nano-electrodes/
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SOI-based silicon quantum dots contacted by self-aligned nano-electrodes
We present a technique to contact individual silicon quantum dots (QDs) by nano-electrodes making use of a self-alignment effect. Starting from an ultra thin silicon on insulator (SOI) substrate we employ self-assembled gold colloidal particles as an etch mask. These particles are deposited onto the substrate using aminosilane [3-(2-aminoethylamino)propyltrimethoxysilane] as an adhesion agent yielding a sub-monolayer sample coverage. The QDs are then fabricated by applying a CF4 reactive ion etch (RIE) process to remove the silicon layer everywhere except below the gold colloids. Subsequently, the colloidal mask is removed by a wet chemical etch and 100-200 nm wide metal wires are patterned by electron beam lithography (EBL) onto the QD-covered samples. A nanometer-sized gap is created in these wires by a controlled electromigration process. The metal wires will preferentially break at the positions of the QDs, because the metal layer is dilated there resulting in a locally higher current density. This leads to a self-alignment effect of the evolving nano-electrodes with respect to the QDs. The native oxide of the silicon QDs is used as a tunneling barrier leading to a single-electron device. The oxide thickness can be increased in a controlled manner by self-limiting thermal oxidation to adjust the tunneling resistance. Finally, I(V)-traces of these devices are collected at liquid helium temperature. They show clear Coulomb blockade behavior as well as Coulomb staircase features.
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Autoren:
Conrad Wolf, Andreas Ladenburger, Rainer Enchelmaier, Klaus Thonke, Rolf Sauer
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Open Access:
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