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Single-electron transistors based on self-assembled silicon-on-insulator quantum dots
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<p>We present an approach to fabricate single-electron devices consisting of a silicon quantum dot (QD) between metallic leads. Silicon QDs are obtained by reactive ion etching into a silicon-on-insulator substrate partially protected by a self-assembled etch mask. Electrodes are fabricated and aligned to the QDs by an electromigration process whereby their native oxide serves as tunneling barrier. The devices show Coulomb blockade corresponding to a charging energy of 19.4 meV and can be switched from the nonconducting to a conducting state giving rise to Coulomb diamonds. The behavior is well reproduced by a numerical orthodox theory calculation.</p>
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Wolf, Conrad R.; Thonke, Klaus; Sauer, Rolf (2010): Single-electron transistors based on self-assembled silicon-on-insulator quantum dots. Appl. Phys. Lett. 96, 142108 (14). DOI: 10.1063/1.3383235
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https://www.hs-coburg.de/publikation/3611-single-electron-transistors-based-on-self-assembled-silicon-on-insulator-quantum-dots/
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Single-electron transistors based on self-assembled silicon-on-insulator quantum dots
We present an approach to fabricate single-electron devices consisting of a silicon quantum dot (QD) between metallic leads. Silicon QDs are obtained by reactive ion etching into a silicon-on-insulator substrate partially protected by a self-assembled etch mask. Electrodes are fabricated and aligned to the QDs by an electromigration process whereby their native oxide serves as tunneling barrier. The devices show Coulomb blockade corresponding to a charging energy of 19.4 meV and can be switched from the nonconducting to a conducting state giving rise to Coulomb diamonds. The behavior is well reproduced by a numerical orthodox theory calculation.
Titel:
Single-electron transistors based on self-assembled silicon-on-insulator quantum dots
Veröffentlichungsdatum:
05.04.2010
Publikationsart:
Zeitschriftenbeiträge
Forschungsschwerpunkt:
Medien:
Appl. Phys. Lett.
DOI:
Weblink:
Heft:
14
Band:
96
Artikelnummer:
142108
ISBN:
Autoren:
Conrad Wolf, Klaus Thonke, Rolf Sauer
Medien:
Appl. Phys. Lett.
Herausgeber:
Seiten:
Open Access:
Peer reviewed:
Nein
Zitierung:
Wolf, Conrad R.; Thonke, Klaus; Sauer, Rolf (2010): Single-electron transistors based on self-assembled silicon-on-insulator quantum dots. Appl. Phys. Lett. 96, 142108 (14). DOI: 10.1063/1.3383235
